APT20M19JVR

$19.48

Description：MOSFET N-CH 200V 112A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:d39b2db6cc86 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT20M19JVR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 200V 112A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT20M19JVR

Description：MOSFET N-CH 200V 112A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：19mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：495 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：11640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT20M19JVR

APT20M19JVR

Single FETs, MOSFETs Overview

The APT20M19JVR is a high-voltage N-Channel enhancement mode power MOSFET from the Power MOS V® series, manufactured by Microsemi Corporation. It utilizes Silicon technology and features an ISOTOP® SOT-227 package with screw mount installation. The device supports a drain-source voltage of 200V and a continuous drain current of 112A at 25°C case temperature. Its maximum on-state resistance is 0.019 Ohms at VGS=10V. Total power dissipation reaches 500W at 25°C, with a linear derating factor of 4 W/°C. Operating junction temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Power MOS V® technology minimizes JFET effect and reduces on-resistance through optimized gate layout for faster switching speeds.
ISOTOP® SOT-227 package provides high reliability and efficient thermal management via direct base mounting.
100% avalanche tested to ensure robustness against inductive load switching events.

Single FETs, MOSFETs Applications

High voltage ultra-fast soft recovery applications
Inductive load switching circuits
High frequency power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches the ISOTOP® SOT-227 outline dimensions. Ensure handling procedures account for electrostatic discharge sensitivity as indicated in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 200V rating and low on-resistance are required for high-current switching. The SOT-227 package facilitates direct heatsink mounting for effective thermal dissipation. Consider the specific gate charge requirements for driver compatibility in high-frequency designs.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS V® family of high-voltage N-Channel enhancement mode power MOSFETs produced by Microsemi. The series focuses on minimizing parasitic effects and improving packing density compared to previous generations.