APT20M22B2VFRG

$12.63

Description：MOSFET N-CH 200V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:157cbbde8bb4 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT20M22B2VFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 200V 100A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT20M22B2VFRG

Description：MOSFET N-CH 200V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：22mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：435 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：10200 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：520W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT20M22B2VFRG

APT20M22B2VFRG

Single FETs, MOSFETs Overview

The APT20M22B2VFR is a Power MOS V N-Channel enhancement mode FREDFET manufactured by Microsemi. It features a T-MAX clip-mounted TO-247 package and operates with a drain-source breakdown voltage of 200V and a continuous drain current of 100A at 25°C. The device exhibits a maximum on-state resistance of 0.022Ω, total gate charge of 435nC, and peak diode recovery dv/dt of 5V/ns. Thermal characteristics include a junction-to-case resistance of 0.24°C/W and a power dissipation rating of 520W.

Single FETs, MOSFETs Feature Summary

Power MOS V technology minimizes the JFET effect to reduce on-resistance and increase packing density.
Optimized gate layout enables faster switching speeds compared to previous generations.
Features a fast recovery body diode with high peak diode recovery dv/dt capability.
Includes 100% avalanche testing for enhanced ruggedness.

Single FETs, MOSFETs Applications

High-frequency DC-DC converters
Motor control circuits
Uninterruptible power supplies (UPS)
Induction heating systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microsemi documentation to confirm exact electrical tolerances and packaging variations. Ensure that the component matches the required thermal interface specifications for the intended application environment. Cross-reference datasheet revision numbers to validate parameter accuracy before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and high-speed switching within a 200V system. Evaluate the thermal impedance curves to ensure adequate heat sinking for the expected duty cycle. Confirm that the gate drive requirements align with the specified threshold voltage and total gate charge parameters.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) FREDFET family, now under Microsemi. These devices are designed as high-voltage N-channel enhancement mode MOSFETs. The product line emphasizes reduced on-resistance and improved switching performance through advanced silicon processing techniques.

Single FETs, MOSFETs Replacement Considerations

Consult official Microsemi substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical ratings and thermal characteristics.