Single FETs, MOSFETs APT21M100J product image

APT21M100J

$24.45
  • Description:MOSFET N-CH 1000V 21A ISOTOP
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:11a931171529 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

APT21M100J is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 21A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT21M100J

  • Description:MOSFET N-CH 1000V 21A ISOTOP
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1000 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:380mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:8500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):462W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:ISOTOP®
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT21M100J

APT21M100J

Single FETs, MOSFETs Overview

The APT21M100J is a single N-channel Power MOSFET module manufactured by Microchip Technology. It utilizes silicon technology and is housed in a SOT-227-4 package designed for screw mount installation. The device features a drain-source breakdown voltage (Vds) of 1 kV and supports a continuous drain current (Id) of 21 A. Its on-resistance (Rds On) is specified at 380 mOhms, with a gate-source voltage range of -30 V to +30 V. The module operates within a temperature range of -55 C to +150 C and has a power dissipation rating of 462 W.

Single FETs, MOSFETs Feature Summary

  • Single N-channel configuration for discrete power switching applications
  • High voltage capability suitable for demanding industrial environments
  • Robust thermal management through screw mount mounting style

Single FETs, MOSFETs Applications

  • Industrial motor drives
  • Power supply inverters
  • High-voltage switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Ensure that the ordering suffix matches the required packaging format. Confirm that the thermal interface material and mounting hardware are compatible with the SOT-227-4 package dimensions for proper heat dissipation.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage, single-channel silicon MOSFET is required for moderate current applications. Consider the 380 mOhm on-resistance for conduction loss calculations and the 462 W power dissipation limit for thermal design. Ensure the gate drive voltage stays within the +/- 30 V specification to prevent damage.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip APT series of power modules, which are designed for robust performance in industrial and commercial power electronics. The series offers various voltage and current ratings to accommodate different system requirements while maintaining compatibility with standard mounting techniques.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available.

APT21M100JAPT21M100J
$24.45
Buy Now

Recent News