Single FETs, MOSFETs APT22F120L product image

APT22F120L

$11.93
  • Description:MOSFET N-CH 1200V 23A TO264
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:f62f3015d4fe Category: Brand:

  
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APT22F120L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 23A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT22F120L

  • Description:MOSFET N-CH 1200V 23A TO264
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:700mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:8370 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1040W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT22F120L

APT22F120L

Single FETs, MOSFETs Overview

The APT22F120L is a through-hole N-channel Power MOS 8™ MOSFET manufactured by Microchip Technology. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 23 A at case temperature. The device has a maximum power dissipation of 1040 W at case temperature and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum on-resistance of 700 mΩ at 12 A and 10 V gate-source voltage, a maximum gate charge of 260 nC at 10 V, and a maximum input capacitance of 8370 pF at 25 V. The component is housed in a TO-264 [L] package.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 1200 V drain-source breakdown voltage for robust switching applications
  • Integrated thermal management supporting up to 1040 W power dissipation under case cooling conditions
  • Optimized gate drive characteristics with low gate charge for efficient control

Single FETs, MOSFETs Applications

  • Industrial motor drives
  • High-voltage power supplies
  • Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to ensure compatibility with design requirements. Confirm that the TO-264 package dimensions match the intended PCB layout. Check for any recent product change notifications or obsolescence notices from Microchip Technology before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required in through-hole designs. Consider the thermal resistance and cooling requirements associated with the 1040 W dissipation rating. Ensure the gate drive circuit can provide the necessary voltage levels to achieve the specified on-resistance performance.

Single FETs, MOSFETs Part Context

The APT22F120L belongs to the Power MOS 8™ series from Microchip Technology, designed for high-performance power switching. This series utilizes advanced silicon technology to balance low on-resistance with high voltage blocking capabilities. The component is part of Microchip's discrete semiconductor portfolio, targeting industrial and commercial power conversion markets.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip documentation for direct replacements. Verify pinout compatibility and electrical parameter equivalence for any substitute components.

APT22F120LAPT22F120L
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