Single FETs, MOSFETs APT22F80B product image

APT22F80B

$7.45
  • Description:MOSFET N-CH 800V 23A TO247
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube

SKU:63eb643b083a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

APT22F80B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 23A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT22F80B

  • Description:MOSFET N-CH 800V 23A TO247
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:500mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:4595 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):625W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT22F80B

APT22F80B

Single FETs, MOSFETs Overview

The APT22F80B is a Power MOS 8™ N-channel FREDFET rated at 800 V with a maximum continuous drain current of 23 A. It features a low on-resistance of 400 mΩ and operates within a temperature range of -55°C to +150°C. The device utilizes a TO-247-3 through-hole package, providing a power dissipation capacity of 625 W. Key electrical characteristics include a gate threshold voltage of 4 V, a gate charge of 150 nC, and switching times of 26 ns (turn-on) and 115 ns (turn-off).

Single FETs, MOSFETs Feature Summary

  • Fast recovery body diode for high dv/dt ruggedness in ZVS circuits.
  • Optimized for quiet switching with minimal EMI and stable parallel operation.
  • Avalanche-energy rated for robust performance under demanding conditions.

Single FETs, MOSFETs Applications

  • Power factor correction
  • Server and telecom power systems
  • Solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm RoHS compliance status and ensure the procurement channel provides valid traceability documentation for this discrete semiconductor component.

Single FETs, MOSFETs Selection Notes

Select the APT22F80B when designing high-frequency, high-voltage applications above 500W requiring fast switching and low EMI. This FREDFET variant is specifically chosen over standard MOSFETs when a fast-recovery intrinsic body diode is necessary for zero-voltage switching reliability.

Single FETs, MOSFETs Part Context

This component belongs to the Power MOS 8™ family, representing Microchip's latest generation of high-speed, high-voltage silicon transistors. The series focuses on reducing electromagnetic interference while maintaining high efficiency in switch-mode power applications.

Single FETs, MOSFETs Replacement Considerations

APT22M80B is the corresponding standard MOSFET version without the fast-recovery body diode. For D3PAK surface-mount integration, use APT22S80B. Verify thermal and electrical compatibility before substitution.

APT22F80BAPT22F80B
$7.45
Buy Now

Recent News