APT28M120B2

Single FETs, MOSFETs Overview

The APT28M120B2 is a through-hole N-channel Power MOSFET from Microchip Technology, part of the POWER MOS 8 series. It features a T-MAX [B2] package (TO-247-3) with a drain-source voltage rating of 1200 V and a continuous drain current of 29 A at case temperature. The device exhibits a maximum on-resistance of 560 mΩ at 14 A and 10 V gate drive. Key electrical parameters include a maximum gate charge of 300 nC at 10 V, an input capacitance of 9670 pF at 25 V, and a power dissipation capacity of 1135 W at case temperature. It operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes T-MAX [B2] through-hole packaging for robust thermal management in high-power applications.
• Incorporates POWER MOS 8 technology to achieve optimized switching performance and low conduction losses.
• Designed for high-voltage operation with a 1200 V drain-source breakdown voltage rating.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturing date code against the latest Microchip Technology datasheet to ensure component authenticity and compliance with current specifications. Confirm that the T-MAX [B2] package dimensions match your PCB footprint requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. Consider the 560 mΩ on-resistance and 300 nC gate charge for driver compatibility and efficiency calculations. Ensure adequate heatsinking is provided to manage the 1135 W power dissipation rating under thermal constraints.

Single FETs, MOSFETs Part Context

This device belongs to the APT28M120 family of discrete semiconductors manufactured by Microchip Technology. It is classified as a single N-channel enhancement mode MOSFET intended for general-purpose high-voltage switching applications. The product utilizes silicon-based technology housed in a standard TO-247-3 leaded package.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip Technology documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying pinout compatibility, voltage ratings, and thermal characteristics.