APT30M36B2FLLG

Single FETs, MOSFETs Overview

The APT30M36B2FLLG is a Power MOS 7 N-Channel enhancement mode power MOSFET manufactured by Microchip Technology. It features a T-MAX package and operates with a drain-source breakdown voltage of 300V and a continuous drain current of 84A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.036Ω at VGS=10V and ID=42A. Total power dissipation reaches 568W, supported by a junction-to-case thermal resistance of 0.22°C/W. Gate threshold voltage ranges from 3V to 5V, while total gate charge is typically 115nC.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology utilizing a patented metal gate structure for low conduction and switching losses
• Fast recovery body diode designed for high-speed switching applications
• Optimized electrical characteristics including reduced input capacitance and Miller charge for easier driving

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Motor control systems
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact package type and environmental compliance status. Confirm that the requested component matches the manufacturer's current datasheet revision. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component based on required voltage ratings and thermal management capabilities. Evaluate the trade-off between on-state resistance and gate charge for specific switching frequency requirements. Ensure the application circuit can support the peak pulsed drain current and avalanche energy limits specified in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) portfolio acquired by Microchip Technology. It utilizes the T-MAX package variant, which shares dimensional similarities with the TO-247 form factor but excludes the central mounting hole. The device represents a generation of silicon power MOSFETs optimized for high-voltage performance.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT or Microchip MOSFETs sharing identical pinouts and similar electrical parameters. Verify compatibility regarding package dimensions and thermal characteristics before substitution.