Single FETs, MOSFETs APT30M70BVRG product image

APT30M70BVRG

$11.65
  • Description:MOSFET N-CH 300V 48A TO247
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:b0b2ce4e2537 Category: Brand:

  
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APT30M70BVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 300V 48A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT30M70BVRG

  • Description:MOSFET N-CH 300V 48A TO247
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):300 V
  • Current - Continuous Drain (Id) @ 25°C:48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:5870 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):370W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT30M70BVRG

APT30M70BVRG

Single FETs, MOSFETs Overview

The APT30M70BVRG is a single N-Channel Power MOSFET manufactured by Microchip Technology, utilizing Silicon technology and housed in a TO-247-3 through-hole package. It features a drain-source breakdown voltage (Vds) of 300 V and supports a continuous drain current (Id) of 48 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 70 mOhms. Key electrical characteristics include a gate-source threshold voltage of 4 V, a total gate charge (Qg) of 130 nC, and a power dissipation rating of 370 W at case temperature. The component operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • N-Channel enhancement mode configuration for efficient unipolar conduction
  • Power MOS 5 technology implementation for optimized switching performance
  • Through-hole mounting capability for robust mechanical attachment

Single FETs, MOSFETs Applications

  • High-power DC-DC converter circuits
  • Motor drive control systems
  • Industrial power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against official Microchip documentation to confirm RoHS compliance status and lead time requirements. Ensure the ordering part number matches the exact datasheet revision. Confirm thermal management specifications align with the 370 W case temperature rating during system integration.

Single FETs, MOSFETs Selection Notes

Select this component when a 300 V rated N-Channel MOSFET with low on-resistance is required for high-current applications. The 48 A continuous current rating and 70 mOhm resistance make it suitable for efficient power handling. Verify that the TO-247-3 package fits the PCB layout and that the driver can handle the 130 nC gate charge effectively.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOSFET portfolio, specifically leveraging Power MOS 5 technology. It is designed as a single discrete transistor for high-voltage switching applications. The product line emphasizes reliability and efficiency in industrial and commercial power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Microchip APT series parts sharing the TO-247-3 package and 300 V rating. Verify pinout compatibility and thermal characteristics before substituting with equivalent components from other manufacturers.

APT30M70BVRGAPT30M70BVRG
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