APT4014BVFRG

Single FETs, MOSFETs Overview

The APT4014BVFRG is a FREDFET power transistor from the POWER MOS V series, manufactured by Microchip Technology. It features an N-Channel configuration with a maximum drain-source voltage of 400V and a continuous drain current of 28A. The device exhibits a maximum on-state resistance of 140 milliohms. Packaged in a TO-247 case, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Integrates a rugged power transistor with a built-in freewheeling diode for efficient switching applications.
• Utilizes advanced MOS V technology to deliver high-performance power switching capabilities.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Inductive load switching systems
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VFRG' against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in distributor listings. Cross-reference the manufacturer part number with authorized channel records to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 400V rating and low conduction losses at 28A. The integrated freewheeling diode simplifies circuit topology by eliminating external diode requirements. Consider the TO-247 package for thermal management needs in medium-power industrial or consumer electronics applications.

Single FETs, MOSFETs Part Context

This device belongs to the POWER MOS V family, characterized by optimized trade-offs between switching speed and conduction loss. As a FREDFET, it combines MOSFET gate drive simplicity with fast recovery diode characteristics, suitable for hard-switching environments where reverse recovery charge impacts efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult Microchip's official cross-reference tools for verified substitutes. Generic equivalents may not match the specific freewheeling diode performance or thermal characteristics of the original POWER MOS V design.