Single FETs, MOSFETs APT5010LVRG product image

APT5010LVRG

$15.67
  • Description:MOSFET N-CH 500V 47A TO264
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:84d6032adc69 Category: Brand:

  
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APT5010LVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 47A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5010LVRG

  • Description:MOSFET N-CH 500V 47A TO264
  • Series:POWER MOS V®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:100mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:470 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:8900 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT5010LVRG

APT5010LVRG

Single FETs, MOSFETs Overview

The APT5010LVRG is a single N-channel silicon MOSFET manufactured by Microchip Technology. It utilizes the POWER MOS V technology and is housed in a TO-247-3 through-hole package with the case connected to the drain. The device features a 500 V drain-source breakdown voltage (Vds) and supports a continuous drain current of 47 A. Its maximum on-resistance (Rds(on)) is 100 mΩ at a gate-source voltage of 10 V. Key electrical characteristics include a gate threshold voltage of 2 V, a total gate charge of 470 nC, and a power dissipation rating of 520 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 500 V drain-source breakdown voltage for robust operation in demanding environments.
  • Low on-resistance design to minimize conduction losses and improve overall system efficiency.
  • Enhanced avalanche ruggedness suitable for applications requiring high energy handling capabilities.

Single FETs, MOSFETs Applications

  • Motor control systems
  • Power factor correction circuits
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'LVRG' against the official Microchip datasheet to confirm pinout configuration and packaging details. Ensure that the TO-247-3 lead form matches the target PCB footprint requirements. Confirm RoHS compliance status directly from the manufacturer's documentation prior to finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V N-channel MOSFET with low on-resistance is required for high-current switching applications. The 47 A continuous current rating and 520 W power dissipation support thermal management in standard heatsink configurations. Consider the 100 mΩ Rds(on) for efficiency optimization in power conversion topologies where conduction loss is a primary constraint.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete semiconductors produced by Microchip Technology, formerly known as Advanced Power Technology. The series focuses on high-performance power MOSFETs designed for industrial and automotive applications. The TO-247-3 package provides a reliable mechanical interface for high-power density designs requiring efficient heat transfer to external cooling structures.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT series devices such as APT50M85LVRG or APT5017SVRG for alternative resistance and current ratings within the same voltage class. Verify pin compatibility and thermal characteristics before substituting any component in an existing design.

APT5010LVRGAPT5010LVRG
$15.67
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