APT5014SLLG/TR

Single FETs, MOSFETs Overview

The APT5014SLLG/TR is a Power MOS 7 N-Channel enhancement mode silicon MOSFET in a TO-247 package. It features a drain-source breakdown voltage of 500V, continuous drain current of 35A at 25°C case temperature, and a maximum on-resistance of 0.140Ω at VGS=10V. Key dynamic parameters include a total gate charge of 72nC, input capacitance of 3261pF, and single pulse avalanche energy of 1300mJ. The device supports an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Power MOS 7 technology for low conduction and switching losses
• Patented metal gate structure enabling fast switching speeds
• Reduced gate charge and Miller capacitance for easier driving

Single FETs, MOSFETs Applications

• High frequency power conversion circuits
• Inductive load switching applications
• Resistive switching environments

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TR' against official Microsemi documentation to confirm tape-and-reel packaging status, as datasheets may primarily reference standard leaded versions. Ensure RoHS compliance requirements are met by checking for the '(G)' designation or equivalent terminal finish specifications in the ordering information section of the manufacturer's data sheet.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient thermal management due to its low RDS(on). Consider the TO-247 package for superior heat dissipation compared to smaller form factors. Evaluate gate drive requirements based on the specified gate charge values to ensure optimal switching performance and minimize power loss during transitions.

Single FETs, MOSFETs Part Context

This part belongs to the APT5014 series of Power MOS 7 devices manufactured by Microsemi. These components are designed to address both conduction and switching losses through advanced semiconductor architecture. The series includes variants like the BLL and SLL packages, offering flexibility for different mounting and thermal requirements in industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT5014 series members such as APT5014BLL(G) for package compatibility. Verify that substitute parts maintain matching voltage ratings, current capabilities, and thermal characteristics to ensure circuit integrity without redesigning the PCB layout or cooling system.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 1300 mJ under specified test conditions.

How does the device handle reverse recovery?

The integrated body diode has a typical reverse recovery time of 510 ns and a reverse recovery charge of 10 µC when sourced at -35A.