APT5020BN

Single FETs, MOSFETs Overview

The APT5020BN is a single N-channel enhancement mode high voltage power MOSFET manufactured by Microchip Technology. It features a Drain-Source Voltage (VDSS) of 500V and a continuous Drain Current (ID) of 28A at 25°C case temperature. The device exhibits a maximum On-State Drain Resistance (RDS(ON)) of 0.20 Ohms at VGS = 10V. Total Power Dissipation (PD) is rated at 360W at 25°C, with a linear derating factor of 2.9 W/°C above this temperature. The operating and storage junction temperature range spans from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode construction for high voltage switching applications
• Integrated body diode with defined forward voltage and reverse recovery characteristics
• Flange mount TO-247 package design for efficient thermal management
• Electrostatic discharge sensitive handling requirements

Single FETs, MOSFETs Applications

• High voltage power switching circuits
• Inductive load control systems
• Power supply topologies requiring robust N-channel MOSFETs

Single FETs, MOSFETs Procurement Notes

Verify the specific part number against official Microchip Technology documentation to confirm electrical parameters and package details. Ensure compliance with electrostatic discharge handling procedures during procurement and assembly. Confirm availability status directly with authorized distributors or the manufacturer, as stock levels and lead times are subject to change.

Single FETs, MOSFETs Selection Notes

Select the APT5020BN for applications requiring a 500V breakdown voltage and 28A continuous current capability. Consider the 0.20 Ohm RDS(ON) for conduction loss calculations at VGS = 10V. Evaluate the thermal resistance values for heat sink sizing in flange mount configurations. Verify gate charge requirements against driver capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This component belongs to the APT series of Power MOS IV® high voltage power MOSFETs produced by Microchip Technology. The series utilizes silicon technology optimized for power switching applications. The APT5020BN specifically targets designs needing reliable N-channel enhancement mode operation within the TO-247 form factor.

Single FETs, MOSFETs Replacement Considerations

The APT5022BN is a documented substitute within the same datasheet family, offering similar 500V rating but with a slightly lower continuous drain current of 27A and higher on-resistance of 0.22 Ohms.