Single FETs, MOSFETs APT5025BN product image

APT5025BN

  • Description:MOSFET N-CH 500V 23A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:604a8c7a5110 Category: Brand:

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APT5025BN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 23A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5025BN

  • Description:MOSFET N-CH 500V 23A TO247AD
  • Series:POWER MOS IV®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:250mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):310W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AD
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT5025BN

APT5025BN

Single FETs, MOSFETs Overview

The APT5025BN is an N-channel enhancement mode high voltage power MOSFET from Microsemi Corporation, housed in a TO-247 package. It features a drain-source breakdown voltage of 500V and a continuous drain current rating of 23A at a case temperature of 25°C. The device exhibits a maximum on-state resistance of 0.25Ω at VGS=10V. Total power dissipation reaches 310W under standard thermal conditions, with an operating junction temperature range spanning from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode construction for high voltage switching applications
  • Low on-state resistance optimized for efficient conduction
  • Robust avalanche energy capability for inductive load protection
  • Fast body diode reverse recovery characteristics

Single FETs, MOSFETs Applications

  • High frequency switch-mode power supplies
  • Motor control circuits
  • DC-DC converters
  • Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-247AD package outline matches your PCB footprint requirements. Ensure electrostatic discharge handling procedures are strictly followed during assembly and testing to prevent device degradation.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V rating and 23A continuous current capacity are required. Evaluate the thermal impedance curve to ensure adequate heat sinking for the intended duty cycle. Compare the gate charge parameters against available driver capabilities to optimize switching speed and minimize switching losses.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of Power MOS IV® high voltage power MOSFETs manufactured by Microsemi Corporation. These devices utilize advanced planar strip technology to achieve superior performance metrics compared to conventional designs. The series is engineered for demanding power electronics environments requiring reliable high-voltage switching.

Single FETs, MOSFETs Replacement Considerations

The APT5030BN serves as a direct alternative within the same series, offering identical voltage ratings but featuring a slightly higher on-state resistance of 0.30Ω and a continuous current rating of 21A. Verify pinout compatibility and thermal characteristics before substitution.

APT5025BNAPT5025BN

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