Bridge Rectifier APT50DL120HJ product image

APT50DL120HJ

$24.46
  • Description:BRIDGE RECT 1P 1.2KV 50A SOT-227
  • Series:-

SKU:fd15e020b6c3 Category: Brand:

  
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APT50DL120HJ is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is BRIDGE RECT 1P 1.2KV 50A SOT-227. Review the specifications below when checking this part for your BOM.

Bridge Rectifier specifications for APT50DL120HJ

  • Description:BRIDGE RECT 1P 1.2KV 50A SOT-227
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Diode Type:Single Phase
  • Technology:Standard
  • Voltage - Peak Reverse (Max):1.2 kV
  • Current - Average Rectified (Io):50 A
  • Voltage - Forward (Vf) (Max) @ If:2.1 V @ 50 A
  • Current - Reverse Leakage @ Vr:250 µA @ 1200 V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Bridge Rectifier datasheet and documents for APT50DL120HJ

APT50DL120HJ

Bridge Rectifier Overview

The APT50DL120HJ is an ISOTOP® Fast Diode Full Bridge Power Module manufactured by Microsemi. It features a maximum DC reverse voltage of 1200 V and supports a maximum average forward current of 50 A at a case temperature of 80°C. The module exhibits a typical diode forward voltage of 2.1 V at 50 A and 25°C, with a maximum reverse leakage current of 250 µA at 1200 V. Dynamic characteristics include a typical reverse recovery time of 170 ns and a reverse recovery charge of 5.6 µC at 25°C. The junction-to-case thermal resistance is typically 0.72 °C/W, and the package provides an RMS isolation voltage of 2500 V.

Bridge Rectifier Feature Summary

  • Ultra fast recovery times with soft recovery characteristics for low noise switching
  • ISOTOP® Package (SOT-227) enabling direct mounting to heatsink with electrical isolation
  • High level of integration within a single full bridge configuration
  • Very low stray inductance and low junction to case thermal resistance

Bridge Rectifier Applications

  • Switch mode power supplies rectifier
  • Induction heating
  • Welding equipment
  • High speed rectifiers

Bridge Rectifier Procurement Notes

Verify component authenticity through authorized Microsemi distributors or official channels. Confirm datasheet revision status prior to implementation. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly. Validate thermal interface material compatibility with the SOT-227 package base for optimal heat dissipation.

Bridge Rectifier Selection Notes

Select this module for applications requiring high blocking voltage and fast recovery characteristics. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Consider the operating temperature range and derating curves for average forward current when designing the cooling system. Verify isolation voltage ratings against system safety standards.

Bridge Rectifier Part Context

This component belongs to the Microsemi ISOTOP® series of fast diode modules. It utilizes the SOT-227 package format designed for efficient thermal transfer and electrical isolation. The product line targets high-frequency power conversion applications where low switching losses and compact form factors are critical design parameters.

Bridge Rectifier Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult Microsemi technical support for equivalent alternatives if sourcing constraints exist.

Bridge Rectifier FAQ

What is the maximum repetitive forward current rating?

The maximum repetitive forward current is 100 A for an 8.3 ms pulse duration, limited by the maximum junction temperature.

Does the module provide electrical isolation?

Yes, the module offers an RMS isolation voltage of 2500 V between any terminal and the case.

What is the typical reverse recovery energy at 25°C?

The typical reverse recovery energy is 2.2 mJ under test conditions of IF = 50 A, VR = 600 V, and di/dt = 1900 A/µs.

APT50DL120HJAPT50DL120HJ
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