Single FETs, MOSFETs APT50M65B2FLLG product image

APT50M65B2FLLG

$24.17
  • Description:MOSFET N-CH 500V 67A T-MAX
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:2e203ead386c Category: Brand:

  
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APT50M65B2FLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 67A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT50M65B2FLLG

  • Description:MOSFET N-CH 500V 67A T-MAX
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 33.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:141 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:7010 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):694W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™ [B2]
  • Package / Case:TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT50M65B2FLLG

APT50M65B2FLLG

Single FETs, MOSFETs Overview

The APT50M65B2FLLG is a through-hole N-channel Power MOS 7® FREDFET manufactured by Microchip Technology. It features a T-MAX™ [B2] (TO-247-3) package and operates with a drain-source voltage of 500 V. The device supports a continuous drain current of 67 A at case temperature, with a maximum power dissipation of 694 W. Key electrical parameters include a typical on-resistance of 65 mΩ at 10 V gate drive and a maximum gate charge of 141 nC. The component functions within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Integrates Power MOS 7 technology for reduced conduction and switching losses via lowered Rds(on) and Qg.
  • Utilizes a patented metal gate structure to achieve exceptionally fast switching speeds.
  • Features low input capacitance and low Miller capacitance for improved drive efficiency.

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits
  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'B2FLLG' against the official Microchip datasheet to confirm pinout compatibility and thermal characteristics. Ensure the procurement channel provides original manufacturer documentation to validate the Power MOS 7 generation and RoHS compliance status before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel switch requires low switching losses in a through-hole configuration. The TO-247-3 package facilitates effective heat dissipation for applications demanding up to 694 W power handling. Compare gate charge requirements against driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the APT50M65 series of Power MOS 7® FREDFETs. These devices are designed as next-generation low-loss, high-voltage N-channel enhancement mode power MOSFETs. The series addresses both conduction and switching losses simultaneously through structural optimizations.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT50M65 variants such as APT50M65LFLLG or APT50M75B2LLG. Verify that alternative packages like TO-264 or mounting styles match the existing board layout and thermal management infrastructure.

APT50M65B2FLLGAPT50M65B2FLLG
$24.17
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