APT50M75JLLU2

Single FETs, MOSFETs Overview

The APT50M75JLLU2 is a single N-channel silicon MOSFET module from the POWER MOS 7 ISOTOP family. It features a SOT-227-4 (ISOTOP) package with screw mount installation. Key electrical parameters include a drain-source breakdown voltage of 500 V, a continuous drain current of 51 A, and a maximum on-resistance of 75 mOhms. The device supports a gate-source voltage range of ±30 V and operates within a junction temperature range of -55°C to +150°C. Power dissipation is rated at 290 W, with switching times including a typical turn-on delay of 10 ns and fall time of 5 ns.

Single FETs, MOSFETs Feature Summary

• Utilizes POWER MOS 7 technology for optimized performance in high-power applications.
• Features an ISOTOP thermal design that electrically isolates the drain from the mounting base.
• Provides robust switching characteristics with low on-resistance and fast transition times.

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix JLLU2 against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure the ordering quantity aligns with factory packaging constraints. Confirm lead times directly with authorized distributors as production cycles may vary. Validate that the SOT-227-4 footprint matches the target PCB or heatsink assembly requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and approximately 75 mOhm on-resistance are required in an isolated TO-227 style package. Compare the 51 A continuous current capability against the application's thermal management limits. Consider the 290 W power dissipation rating relative to available cooling solutions. Evaluate the switching speeds against electromagnetic interference (EMI) constraints in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's POWER MOS 7 series, which represents an evolution of planar trench MOSFET technology. The ISOTOP package variant provides a standardized form factor compatible with legacy designs while offering improved thermal isolation compared to standard metal-tab packages. It serves as a discrete power solution for medium-to-high power density applications requiring reliable switching performance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include APT50M75JLL and APT50M75JLLU3, which share identical electrical specifications and package dimensions. Verify that any alternative suffix indicates the same pin configuration and thermal interface characteristics to ensure mechanical interchangeability without redesigning the mounting hardware.