APT51M50J

Single FETs, MOSFETs Overview

The APT51M50J is a chassis-mount N-channel power MOSFET from the POWER MOS 7 series by Microchip Technology. It features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 51 A at case temperature. The device has a maximum power dissipation of 480 W at case temperature and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate-source voltage (Vgs) of ±30 V, a typical on-resistance (Rds(on)) of 50 mΩ at 10 V, and a maximum gate charge (Qg) of 200 nC. The component utilizes the ISOTOP package for efficient thermal management.

Single FETs, MOSFETs Feature Summary

• ISOTOP packaging design provides enhanced thermal performance and simplified mounting for high-power applications.
• POWER MOS 7 technology delivers low on-resistance and optimized switching characteristics.
• Robust construction supports high-voltage operation with reliable thermal stability.

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes when sourcing, as manufacturing updates may occur. Confirm that the procurement channel is authorized to ensure component authenticity and traceability. Check for any product change notifications (PCNs) related to this part number before finalizing orders. Ensure compatibility with existing thermal interface materials and mounting hardware specifications.

Single FETs, MOSFETs Selection Notes

Select the APT51M50J for applications requiring 500 V blocking capability and moderate current handling up to 51 A. Consider the 50 mΩ on-resistance for efficiency calculations in conduction loss scenarios. Evaluate the thermal resistance characteristics against the system's heat sink capabilities to maintain junction temperatures within the specified 150°C limit. Compare switching times against circuit requirements to ensure adequate speed without excessive EMI.

Single FETs, MOSFETs Part Context

This component belongs to Microchip's discrete power MOSFET portfolio, specifically designed for industrial and commercial power electronics. It represents a legacy offering from the Microsemi acquisition, maintaining compatibility with established designs. The ISOTOP form factor distinguishes it from standard surface-mount devices, targeting applications where mechanical robustness and direct heatsinking are critical.

Single FETs, MOSFETs Replacement Considerations

Direct replacements should be sought within the same POWER MOS 7 family or equivalent 500 V N-channel ISOTOP packages. Verify pinout compatibility and thermal pad dimensions when substituting. Cross-reference absolute maximum ratings to ensure the alternative device meets or exceeds the original voltage and current specifications.