APT55M50JFLL

Single FETs, MOSFETs Overview

The APT55M50JFLL is a Power MOS 7 N-Channel enhancement mode power MOSFET in an ISOTOP SOT-227 package. It features a drain-source breakdown voltage of 550V and a continuous drain current of 77A at 25°C case temperature. The maximum on-state resistance is 0.050Ω at VGS=10V and ID=38.5A. Total power dissipation reaches 694W at 25°C, with a linear derating factor of 5.56 W/°C. Operating junction temperature ranges from -55°C to +150°C. Key dynamic parameters include a total gate charge of 265nC, turn-on delay time of 26ns, rise time of 17ns, turn-off delay time of 55ns, and fall time of 12ns.

Single FETs, MOSFETs Feature Summary

• Utilizes Power MOS 7 technology for significantly lowered conduction and switching losses.
• Features a fast recovery body diode with high peak diode recovery dv/dt capability.
• Incorporates a patented metal gate structure for exceptionally fast switching speeds.
• Offers lower input capacitance, Miller capacitance, and gate charge for easier driving.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Inductive load switching applications
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as Advanced Power Technology (APT) or Microsemi based on specific datasheet revisions, as corporate ownership has changed. Confirm the component matches the exact 550V rating and SOT-227 ISOTOP package outline provided in the official documentation before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage handling and low thermal impedance. Ensure the gate drive circuitry can supply sufficient current to manage the 265nC gate charge efficiently. Verify that the application's peak repetitive avalanche energy requirements do not exceed the specified limits under inductive switching conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOS 7 family of high-voltage N-Channel enhancement mode MOSFETs. It is designed to address both conduction and switching losses simultaneously through optimized cell architecture and metal gate structures, distinguishing it from earlier generations of power MOSFETs.

Single FETs, MOSFETs Replacement Considerations

The document references APT60DF60 as a related part number within the same product family context.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The single pulse avalanche energy rating is 3600 mJ when starting at a junction temperature of +25°C, using an inductance of 1.21mH and a gate resistance of 25Ω.

How does the source-drain diode perform during reverse recovery?

At TJ=25°C, the reverse recovery charge is typically 2.2µC and the peak recovery current is 16A when tested with a source current of -77A and a di/dt of 100A/µs.