APT56M60B2

Single FETs, MOSFETs Overview

The APT56M50B2 is a through-hole N-channel Power MOSFET from Microchip Technology, utilizing the Power MOS 8 technology. It features a 500 V drain-source voltage (Vdss) and a continuous drain current (Id) of 56 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 85 mΩ at 10 V gate drive and 28 A drain current. Key electrical parameters include a gate charge (Qg) of 220 nC, input capacitance (Ciss) of 11300 pF, and a power dissipation rating of 780 W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Power MOS 8 technology for enhanced performance
• Through-hole mounting in T-MAX-3 package
• High thermal stability up to 150°C junction temperature

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High-power switching applications
• Automotive electronics requiring high reliability

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official Microchip documentation, as 'APT56M60B2' may be a variant or typo for 'APT56M50B2'. Confirm package type (T-MAX-3) and voltage rating (500V vs 600V) with the supplier. Ensure RoHS compliance details are checked if required for your application. Cross-reference datasheet revision dates for accurate specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-current, high-voltage applications requiring robust thermal performance. The 85 mΩ Rds(on) offers low conduction losses at 56A. Consider the through-hole T-MAX-3 package for mechanical stability and heat sinking. Verify gate drive requirements align with the 220 nC gate charge and 10V typical drive voltage for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's Power MOS 8 family, designed for high-efficiency power switching. It is an N-channel enhancement mode MOSFET suitable for demanding environments. The T-MAX-3 package provides superior thermal characteristics compared to standard TO-247 packages, making it ideal for high-power density designs.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes like APT56M60B2 if 600V rating is acceptable, but verify current and Rds(on) differences. Other Power MOS 8 devices in similar packages may offer alternative trade-offs between speed and conduction loss. Always confirm pinout compatibility and thermal resistance values before substitution.