Single FETs, MOSFETs APT6013LLLG product image

APT6013LLLG

$20.72
  • Description:MOSFET N-CH 600V 43A TO264
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:d39abdd10902 Category: Brand:

  
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APT6013LLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 43A TO264. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT6013LLLG

  • Description:MOSFET N-CH 600V 43A TO264
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:130mOhm @ 21.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:5630 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):565W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-264 [L]
  • Package / Case:TO-264-3, TO-264AA

Single FETs, MOSFETs datasheet and documents for APT6013LLLG

APT6013LLLG

Single FETs, MOSFETs Overview

The APT6013LLLG is a through-hole N-channel Power MOSFET from the POWER MOS 7 series, manufactured by Microchip Technology. It features a TO-264 [L] package with a maximum drain-source voltage of 600 V and a continuous drain current of 43 A at case temperature. The device has a maximum power dissipation of 565 W at case temperature and operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a maximum on-resistance of 130 mΩ at 10 V gate drive and 21.5 A drain current, a maximum gate charge of 130 nC at 10 V, and a maximum input capacitance of 5630 pF at 25 V.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode metal-oxide semiconductor field-effect transistor utilizing POWER MOS 7 technology for optimized performance.

Single FETs, MOSFETs Applications

    Single FETs, MOSFETs Procurement Notes

    Verify the component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package type matches the required TO-264 form factor. Ensure the ordering suffix corresponds to the specific tape and reel or tube packaging configuration required for your assembly process. Cross-reference the part number with the latest Microchip Technology documentation to confirm current production status and any potential obsolescence notices.

    Single FETs, MOSFETs Selection Notes

    Select this component for applications requiring high-voltage switching capabilities with moderate current handling in a through-hole configuration. Consider the thermal management requirements due to the specified power dissipation rating. Evaluate the gate drive requirements against the maximum gate charge and threshold voltage specifications to ensure compatibility with the control circuitry. Verify that the operating temperature range meets the environmental conditions of the intended application.

    Single FETs, MOSFETs Part Context

    This device belongs to the APT6013 family of discrete semiconductors produced by Microchip Technology. It is categorized under transistors and specifically as a MOSFET. The product line focuses on power switching solutions, leveraging advanced silicon processes to achieve low on-resistance and robust switching characteristics suitable for various industrial and consumer electronics applications.

    Single FETs, MOSFETs Replacement Considerations

    Consult Microchip Technology's official documentation for direct replacements or pin-compatible alternatives. Verify that any substitute component matches the voltage, current, and package specifications. Cross-reference parameters such as on-resistance and gate charge to ensure functional equivalence in the target circuit design.

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