Single FETs, MOSFETs APT75F50B2 product image

APT75F50B2

$12.81
  • Description:MOSFET N-CH 500V 75A T-MAX
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:7e3c75575571 Category: Brand:

  
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APT75F50B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 500V 75A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT75F50B2

  • Description:MOSFET N-CH 500V 75A T-MAX
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:75mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:290 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:11600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1040W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™ [B2]
  • Package / Case:TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT75F50B2

APT75F50B2

Single FETs, MOSFETs Overview

The APT75F50B2 is a single N-Channel FREDFET MOSFET manufactured by Microchip Technology. It features a 500 V drain-source breakdown voltage and supports a continuous drain current of 75 A at case temperature. The device exhibits a maximum on-resistance of 63 mΩ and a gate charge of 180 nC. Electrical characteristics include a threshold voltage of 4 V, a forward transconductance of 19 S, and switching times of 100 ns turn-on delay and 33 ns fall time. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 1040 W.

Single FETs, MOSFETs Feature Summary

  • High efficiency switching with very low switching and conduction losses
  • Low gate charge for reduced gate drive power and faster operation

Single FETs, MOSFETs Applications

  • High-voltage switching applications
  • Fast switching speed circuits
  • Amplifying applications requiring high voltage

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes when sourcing. Confirm that the T-MAX package dimensions match your thermal management design. Ensure the gate drive circuitry accommodates the specified 4 V threshold voltage and 180 nC gate charge requirements for optimal performance.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust 500 V blocking capability combined with high current handling. The T-MAX package facilitates efficient heat dissipation for high-power scenarios. Evaluate the trade-off between the 63 mΩ on-resistance and the 180 nC gate charge against your specific switching frequency and thermal constraints.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip APT series of FREDFET MOSFETs, designed for high-performance power switching. It utilizes silicon technology in a through-hole T-MAX package. The product line emphasizes low loss characteristics suitable for demanding industrial and commercial power electronics environments.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same APT series offering similar voltage and current ratings. Verify pinout compatibility and thermal resistance values before substituting with other manufacturers' TO-247 variants.

APT75F50B2APT75F50B2
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