APT7M120B

Single FETs, MOSFETs Overview

The APT7M120B is a single N-channel Power MOSFET from the Microchip Technology Power MOS 8 family, housed in a TO-247-3 through-hole package. It features a drain-source breakdown voltage (Vds) of 1200 V and a continuous drain current (Id) of 7 A at case temperature. The device exhibits a maximum on-state resistance (Rds(on)) of 1.57 Ohms and a gate charge (Qg) of 80 nC. Key switching parameters include a typical turn-on delay of unspecified nanoseconds, rise time of 8 ns, turn-off delay of 45 ns, and fall time of 13 ns. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 335 W.

Single FETs, MOSFETs Feature Summary

• Utilizes Power MOS 8 technology for optimized performance
• Designed for high-voltage switching applications
• Through-hole mounting for robust mechanical connection

Single FETs, MOSFETs Applications

• High-voltage DC-DC converters
• Motor control circuits
• Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision level against the official Microchip datasheet to ensure compatibility with your design requirements. Confirm that the TO-247-3 pinout matches your PCB footprint exactly. Check for any recent product change notices (PCNs) regarding manufacturing site or material composition changes before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 1200 V rating is required with moderate current handling capabilities around 7 A. Consider the 1.57 Ohm Rds(on) for conduction loss calculations in low-frequency switching scenarios. Ensure thermal management solutions can handle the 335 W dissipation rating under appropriate case temperature conditions.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of discrete power semiconductors manufactured by Microchip Technology. It is distinct from IGBT modules like the APT75GT120JU3 and other MOSFET variants such as the APT7F120B. The Power MOS 8 generation focuses on improving figure-of-merit metrics for efficient power conversion.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 1200 V N-channel MOSFETs in TO-247 packages from Microchip or other manufacturers, provided electrical parameters such as Vds, Id, and Rds(on) are compatible. Verify pinout compatibility and thermal characteristics before substitution.