APT8030LVFRG

Single FETs, MOSFETs Overview

The APT8030LVFRG is a single N-channel silicon MOSFET from Microchip Technology, housed in a TO-264-3 package. It features an 800 V drain-source breakdown voltage and a continuous drain current of 27 A. The device exhibits a maximum on-resistance of 300 mΩ at room temperature. Gate specifications include a threshold voltage of 2 V and a total gate charge of 510 nC. The component supports a maximum power dissipation of 520 W and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes Fast Recovery Epitaxial Diode (FREDFET) technology for optimized switching performance.
• Designed with an enhancement mode channel configuration for efficient control.
• Constructed using silicon semiconductor technology for robust high-voltage operation.

Single FETs, MOSFETs Applications

• High-voltage industrial motor drives
• Power supply circuits requiring fast recovery characteristics
• Inverter applications in renewable energy systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging format matches your assembly requirements. Confirm that the RoHS compliance status aligns with your environmental regulations. Cross-reference the datasheet revision date to ensure all electrical parameters are current. Validate the thermal resistance values against your specific heatsinking design before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required alongside moderate conduction losses. The TO-264-3 package offers a balance between thermal performance and mounting flexibility compared to smaller surface-mount options. Consider the 510 nC gate charge when designing drive circuits to ensure adequate switching speed without excessive driver current demands.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of FREDFET MOSFETs manufactured by Microchip Technology. These devices are engineered for high-voltage switching applications where fast recovery characteristics are critical. The series typically includes various voltage and current ratings packaged in standard through-hole formats like TO-264.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 800 V rating, N-channel configuration, and TO-264-3 package. Verify that any alternative device maintains comparable Rds(on) and Qg values to ensure circuit compatibility. Check for pinout equivalence to avoid redesigning the PCB layout.