APTM20UM05SG

$101.96

Description：MOSFET N-CH 200V 317A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:11a23cd2e98c Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APTM20UM05SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 200V 317A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM20UM05SG

Description：MOSFET N-CH 200V 317A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：317A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：5mOhm @ 158.5A, 10V
Vgs(th) (Max) @ Id：5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：448 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：27400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1136W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：Module
Package / Case：J3 Module

Single FETs, MOSFETs datasheet and documents for APTM20UM05SG

APTM20UM05SG

Single FETs, MOSFETs Overview

The APTM20UM05SG is a Power MOS 7 N-Channel Silicon MOSFET module featuring an isolated package with direct heatsink mounting capability. It integrates two elements: a common source MOSFET and built-in diodes in both series and parallel configurations. Key electrical parameters include a drain-source breakdown voltage of 200 V, a maximum continuous drain current of 317 A at Tc=25°C, and a maximum on-resistance of 5 mΩ at Tj=25°C. The device supports a pulsed drain current of 1268 A and offers avalanche energy ratings of 50 mJ (repetitive) and 2500 mJ (single pulse).

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology providing low on-resistance, low input/Miller capacitance, and low gate charge.
Kelvin source connection designed for easy drive implementation.
Very rugged construction rated for repetitive and single-pulse avalanche energy.
High level of integration with M6 power connectors and M4 signal connectors.

Single FETs, MOSFETs Applications

Motor control systems
Switched Mode Power Supplies
Uninterruptible Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'SG' against manufacturer documentation to confirm exact pinout, connector type, or material compliance status. Confirm RoHS compliance requirements as standard datasheets may list lead-based options. Ensure thermal interface materials are compatible with the isolated package design for effective heat dissipation.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring outstanding performance and low stray inductance. Consider the low junction-to-case thermal resistance for efficient cooling. Evaluate the integrated diode characteristics for reverse recovery time and forward voltage if used in synchronous rectification or freewheeling topologies.

Single FETs, MOSFETs Part Context

This module belongs to the Advanced Power Technology (APT) Power MOS 7 family, manufactured by Microsemi Corporation. It utilizes silicon metal-oxide semiconductor field-effect transistor technology housed in a MODULE-7 package. The product line emphasizes high integration and ruggedness for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent modules within the Power MOS 7 family. Verify that any replacement matches the 200V rating, 317A current capacity, and 5mΩ on-resistance specifications.