APTM50UM25SG

$93.01

Description：MOSFET N-CH 500V 149A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk

SKU:042395b6fe98 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APTM50UM25SG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 149A MODULE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APTM50UM25SG

Description：MOSFET N-CH 500V 149A MODULE
Series：-
Mfr：Microsemi Corporation
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：149A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：25mOhm @ 74.5A, 10V
Vgs(th) (Max) @ Id：5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：364 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：17500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1250W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：Module
Package / Case：J3 Module

Single FETs, MOSFETs datasheet and documents for APTM50UM25SG

APTM50UM25SG

Single FETs, MOSFETs Overview

The APTM50UM25SG is a Power MOS 7 MOSFET module featuring an integrated single switch and series/parallel diodes. It provides a Drain-Source Breakdown Voltage of 500 V and a maximum ON Resistance of 25 mΩ at Tj = 25°C. The continuous drain current reaches 149 A at Tc = 25°C, with a pulsed current capability of 550 A. Maximum power dissipation is rated at 1250 W at Tc = 25°C. The module includes avalanche energy ratings for repetitive (50 mJ) and non-repetitive (1600 mJ) conditions.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology providing low on-resistance and low gate charge
Kelvin source connection designed to facilitate easy drive circuitry
Low stray inductance achieved through M6 power and M4 signal connectors
Avalanche energy rated for rugged operation under high stress

Single FETs, MOSFETs Applications

Motor control systems
Switched Mode Power Supplies
Uninterruptible Power Supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' against official Microchip or Advanced Power documentation to confirm RoHS compliance status and exact manufacturing revision. Ensure procurement channels provide valid datasheets matching the APTM50UM25S Rev 1 specifications. Confirm thermal interface requirements and mounting torque specifications (M4: 1.2 N.m, M6: 3-5 N.m) prior to assembly.

Single FETs, MOSFETs Selection Notes

Select this module for applications requiring high-frequency switching performance and direct heatsink mounting. The isolated package design supports low junction-to-case thermal resistance. Consider the integrated diode options when designing circuits that require both active switching and freewheeling paths within a single compact form factor.

Single FETs, MOSFETs Part Context

This component belongs to the APTM series of discrete semiconductor modules manufactured by Advanced Power Technology, now part of Microchip Technology. The series utilizes Silicon (Si) technology and is categorized as a MOSFET-SBD Module. These modules are designed for high-power industrial applications requiring robust switching capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Cross-reference electrical parameters such as BVDSS, RDS(on), and package dimensions before considering alternative part numbers.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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