AS1M025120T

$31.29

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube

SKU:f660e6b3dad6 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS1M025120T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL SILICON CARBIDE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS1M025120T

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id：4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AS1M025120T

AS1M025120T

Single FETs, MOSFETs Overview

The AS1M025120T is an N-Channel Silicon Carbide Power MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a TO-247-4 package with a drain-source voltage rating of 1200 V and a continuous drain current of 65 A at 25°C. The device exhibits a maximum on-resistance of 34 mΩ at VGS=20V. Key electrical parameters include a gate threshold voltage of 2.4 V typical, total gate charge of 195 nC, and turn-off switching energy of 0.6 mJ. Thermal performance includes a junction-to-case resistance of 0.25 °C/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

High blocking voltage combined with low on-resistance for efficient power handling
High-speed switching capability supported by low capacitance values
Designed for easy paralleling and simple drive requirements

Single FETs, MOSFETs Applications

Power Supplies
Switch Mode Power Supplies
High Voltage DC/DC Converters
Motor Drivers
Pulsed Power Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before integration. Confirm that the TO-247-4 pinout matches the target circuit design, particularly regarding the isolated source terminal. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance to maintain operation within the 150°C limit under expected load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust switching performance. The 1200 V rating suits systems operating above standard silicon limits. Evaluate the 34 mΩ on-resistance against conduction loss requirements. Consider the 65 A continuous current rating relative to peak load demands and ambient thermal conditions to ensure reliable long-term operation without exceeding thermal boundaries.

Single FETs, MOSFETs Part Context

This device belongs to the Silicon Carbide Power MOSFET category produced by ANBON SEMICONDUCTOR (INT'L) LIMITED. The manufacturer specializes in Si and SiC-based products for automotive and industrial markets. This specific part utilizes advanced SiC material properties to achieve superior performance characteristics compared to traditional silicon counterparts in high-power environments.