AS3401

$0.20

Description：P-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6eb10d406506 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS3401 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is P-CHANNEL ENHANCEMENT MODE MOSFE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS3401

Description：P-CHANNEL ENHANCEMENT MODE MOSFE
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：55mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.2 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for AS3401

AS3401

Single FETs, MOSFETs Overview

The AS3401 is a P-Channel Enhancement Mode MOSFET manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a -30V drain-source voltage rating and utilizes advanced trench process technology for ultra-low on-resistance. Key electrical parameters include a maximum RDS(on) of 55mΩ at VGS=-10V, a continuous drain current of -4.4A, and a pulsed drain current of -27A. The device operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-23 package.

Single FETs, MOSFETs Feature Summary

Advanced trench process technology
High density cell design for ultra low on-resistance

Single FETs, MOSFETs Applications

Load Switch for Portable Devices
DC/DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (AS-3150010 Rev F) against your design requirements. Confirm that the SOT-23 package dimensions and thermal characteristics align with your PCB layout and heat dissipation capabilities. Ensure gate drive voltages remain within the ±12V absolute maximum rating to prevent device failure.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring compact P-Channel switching solutions. The low on-resistance supports efficient power management in portable devices. Verify that the required gate drive levels match the specified thresholds for optimal performance and minimal conduction losses.

Single FETs, MOSFETs Part Context

This component belongs to the P-Channel Enhancement Mode MOSFET category from ANBON SEMICONDUCTOR (INT'L) LIMITED. It is designed for general-purpose switching applications where space constraints and efficiency are critical factors in system design.