ASZM040120T

Single FETs, MOSFETs Overview

The ASZM040120T is an N-Channel Silicon Carbide Power MOSFET housed in a TO-247-4 package. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 68A at 25°C case temperature. The device exhibits a typical on-resistance of 35mΩ at VGS=18V and 32mΩ at VGS=20V. Key dynamic parameters include a total gate charge of 87nC, input capacitance of 2820pF, and reverse recovery charge of 281nC. Thermal performance includes a junction-to-case resistance of 0.44°C/W and a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes widebandgap silicon carbide technology for high blocking voltage and low on-resistance.
• Features low capacitances enabling high-speed switching capabilities.
• Demonstrates low reverse recovery characteristics for the integrated source-drain diode.

Single FETs, MOSFETs Applications

• Switch Mode Power Supplies
• Renewable Energy Systems
• Motor Drives
• High Voltage DC/DC Converters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the datasheet revision date (2024/02/28) and document ID (AS-3270080). Confirm that the TO-247-4 package dimensions match your PCB footprint requirements. Ensure thermal management solutions support the specified junction-to-case resistance and maximum operating temperatures to maintain reliability under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with efficient thermal dissipation. The TO-247-4 package facilitates robust mounting and heat sinking. Consider the specific gate drive voltage requirements, as on-resistance varies between 18V and 20V test conditions. Evaluate the switching energy losses against system efficiency targets, particularly noting the turn-on and turn-off energy values provided in the electrical characteristics.

Single FETs, MOSFETs Part Context

This part belongs to the category of N-Channel Silicon Carbide Power MOSFETs. It is designed for power electronics applications demanding high efficiency and reliability. The TO-247-4 package provides a standardized form factor for industrial and commercial power conversion systems, distinguishing it from standard silicon MOSFETs through its widebandgap material properties.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for compatible alternatives. Verify that any substitute matches the 1200V rating, TO-247-4 package, and similar electrical characteristics such as on-resistance and gate charge to ensure circuit compatibility.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at elevated temperatures?

The maximum continuous drain current decreases to 48A when the case temperature is maintained at 100°C.

How does the on-resistance change at high junction temperatures?

At a junction temperature of 175°C, the on-resistance increases to a maximum of 60mΩ at VGS=18V and 55mΩ at VGS=20V.