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ATP106-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 40V 30A ATPAK. Review the specifications below when checking this part for your BOM.
The ATP106-TL-H is a single P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 40 V and a continuous drain current of 30 A. The device exhibits a maximum on-resistance of 41 mΩ at room temperature. It operates within a junction temperature range from -55 °C to +150 °C, with a power dissipation rating of 40 W. The component utilizes an ATPAK-3 surface-mount package with three pins.
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm RoHS and REACH compliance status directly with the supplier documentation. Ensure the component matches the required ATPAK-3 footprint dimensions for PCB layout compatibility. Check for any obsolescence notices or lifecycle changes associated with this part number.
Select this component when a low-voltage P-channel solution is required with moderate current handling capabilities. The ATPAK-3 package offers a compact form factor suitable for space-constrained designs. Evaluate the 41 mΩ on-resistance against system efficiency requirements. Consider the 40 W power dissipation limit in relation to the available thermal resistance of the printed circuit board copper area.
This device belongs to the ATP series of power MOSFETs from onsemi, which are engineered for high-performance switching applications. The ATPAK packaging technology integrates advanced thermal design principles to minimize junction-to-case resistance. This specific model represents the 40 V variant within the P-channel lineup, providing a balance between voltage rating and conduction losses.
Cross-reference with other ATPAK-3 packaged P-channel MOSFETs from onsemi offering similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting. Ensure the replacement device meets or exceeds the original specifications for on-resistance and gate threshold voltage.
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