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ATP108-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 40V 70A ATPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for ATP108-TL-H
- Description：MOSFET P-CH 40V 70A ATPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：79.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3850 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：ATPAK
- Package / Case：ATPAK (2 Leads+Tab)
Single FETs, MOSFETs datasheet and documents for ATP108-TL-H
Single FETs, MOSFETs Overview
The ATP108-TL-H is a single-channel P-Channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 40 V, a continuous drain current (Id) of 70 A, and a maximum on-resistance (Rds On) of 10.4 mOhms. The device operates with a gate-source voltage range of -20 V to +20 V and features a threshold voltage (Vgs th) of 2.6 V. Additional specifications include a gate charge (Qg) of 79.5 nC, power dissipation (Pd) of 60 W, and a junction temperature range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Low on-resistance design to minimize conduction losses
- Robust thermal performance with high power dissipation capability
- Surface-mount ATPAK-3 packaging for compact integration
Single FETs, MOSFETs Applications
- Power management circuits requiring low-side or high-side switching
- DC-DC converter topologies utilizing P-Channel devices
- Load switch applications in portable electronic systems
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS and REACH compliance details via official datasheets. Check for alternative sourcing channels as standard availability may be limited. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 40 V P-Channel MOSFET with high current handling up to 70 A. The ATPAK-3 package offers a balance of thermal efficiency and board space savings. Consider the 10.4 mOhm on-resistance for efficiency calculations in low-voltage, high-current scenarios. Verify gate drive compatibility with the 2.6 V threshold voltage.
Single FETs, MOSFETs Part Context
This part belongs to the ATP108 series of power MOSFETs from onsemi. It shares the ATPAK-3 package family with other variants like ATP208-TL-H, though channel types and current ratings differ. The series is designed for general-purpose power switching in consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult onsemi technical support for direct replacements or evaluate similar P-Channel MOSFETs with matching Vds, Id, and Rds On specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
