ATP212-TL-H

$1.34

Description：MOSFET N-CH 60V 35A ATPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e0342feae72c Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

ATP212-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 35A ATPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ATP212-TL-H

Description：MOSFET N-CH 60V 35A ATPAK
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：23mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：34.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1820 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：ATPAK
Package / Case：ATPAK (2 Leads+Tab)

Single FETs, MOSFETs datasheet and documents for ATP212-TL-H

ATP212-TL-H

Single FETs, MOSFETs Overview

The ATP212-TL-H is a single N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package with three pins. Key electrical specifications include a drain-source breakdown voltage of 60 V, a continuous drain current of 35 A, and a maximum drain-source on-resistance of 37 mΩ. The device supports a gate-source voltage range of -10 V to +10 V and operates within a temperature range up to +150 °C. Power dissipation is rated at 40 W.

Single FETs, MOSFETs Feature Summary

Single N-channel configuration for efficient switching applications
ATPAK-3 surface-mount package design for compact integration
Enhancement mode operation with low on-resistance characteristics

Single FETs, MOSFETs Applications

General-purpose power switching circuits
DC-DC converter topologies
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status and specific lot traceability requirements before procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain device integrity during assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 60 V rating with moderate current handling capabilities. The ATPAK-3 package offers thermal efficiency suitable for space-constrained layouts. Evaluate the 37 mΩ on-resistance against system efficiency targets and ensure gate drive voltages align with the specified ±10 V limits for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the ATP series of power MOSFETs from onsemi, designed for high-efficiency switching applications. The ATPAK packaging provides improved thermal performance compared to traditional packages. It serves as a discrete solution for power management tasks where reliability and compact form factors are prioritized over integrated circuit complexity.