Single FETs, MOSFETs AUIRF1010ZL product image

AUIRF1010ZL

$1.39
  • Description:AUIRF1010 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:3a2a20c02d2c Category: Brand:

  
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AUIRF1010ZL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRF1010 - 55V-60V N-CHANNEL AU. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1010ZL

  • Description:AUIRF1010 - 55V-60V N-CHANNEL AU
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:2840 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRF1010ZL

AUIRF1010ZL

Single FETs, MOSFETs Overview

The AUIRF1010ZL is an automotive-grade N-channel enhancement mode MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a 55V drain-source voltage rating and a continuous drain current of 94A at 25°C. The device offers a typical on-resistance of 7.5mΩ at 10V gate drive. Packaged in a TO-262-3 (IPAK) through-hole format, it supports junction temperatures up to 175°C and carries AEC-Q100 qualification for automotive reliability.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified under AEC-Q100 standards for enhanced reliability
  • HEXFET technology provides low conduction losses
  • Robust thermal performance with high power dissipation capability
  • Through-hole IPAK package design for secure mounting

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control applications
  • High-current switching circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm specific lot codes and date codes against project requirements. Ensure storage conditions meet moisture sensitivity level specifications prior to assembly. Cross-reference datasheet revisions to confirm parameter consistency with original design intent.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring automotive certification and through-hole mounting. Compare total system cost including thermal management against surface-mount alternatives. Evaluate gate charge requirements against driver capabilities to ensure adequate switching speed. Verify PCB footprint compatibility with the TO-262-3 package dimensions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs designed for high-efficiency switching. It represents an automotive-specific variant within Infineon's broader portfolio of silicon-based power devices. The product line focuses on balancing low on-resistance with robust avalanche energy handling for demanding environments.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for equivalent automotive-grade N-channel MOSFETs. Verify pinout compatibility and thermal resistance characteristics before substitution. Check for updated packaging options if surface-mount solutions are preferred.

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