AUIRF1324

Single FETs, MOSFETs Overview

The AUIRF1324 is an N-channel enhancement mode MOSFET from the HEXFET series, designed for automotive applications. It features a maximum drain-source voltage of 24 V and a continuous drain current of 353 A at case temperature. The device utilizes a TO-220AB through-hole package with three pins. Key electrical parameters include a maximum on-resistance of 2 mΩ, a gate threshold voltage range of 2 V to 4 V, and a maximum power dissipation of 300 W. It operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards
• High current handling capability suitable for heavy-duty power switching
• Low on-resistance design for efficient power management

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits in vehicles
• High-current DC-DC conversion modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against Infineon official documentation before integration. Confirm that the specific part number matches the required automotive grade specifications. Ensure storage conditions comply with moisture sensitivity level requirements to prevent damage during assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when high current capacity and low on-resistance are critical for automotive power applications. Consider the TO-220AB package for through-hole mounting requirements. Evaluate thermal management needs based on the 300 W power dissipation rating and operating temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. The HEXFET series is known for its optimized cell structure for low on-resistance and fast switching speeds. The AUIRF1324 variant specifically targets automotive markets requiring robust performance under harsh environmental conditions.