Single FETs, MOSFETs AUIRF1404ZS product image

AUIRF1404ZS

  • Description:MOSFET N-CH 40V 160A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:c5fadff871ed Category: Brand:

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AUIRF1404ZS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 160A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1404ZS

  • Description:MOSFET N-CH 40V 160A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF1404ZS

AUIRF1404ZS

Single FETs, MOSFETs Overview

The AUIRF1404ZS is an automotive-grade, single N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package. It features a maximum drain-source voltage of 40V and a typical on-resistance of 3.7mΩ at VGS=10V. The device supports continuous drain currents up to 180A (silicon limited) or 160A (package limited). Key electrical parameters include a total gate charge of 100nC, a maximum junction temperature of 175°C, and a thermal resistance from junction to case of 0.75°C/W.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability
  • Advanced process technology enabling ultra-low on-resistance
  • Capable of repetitive avalanche operation up to the maximum junction temperature
  • Fast switching characteristics with a 175°C operating temperature rating

Single FETs, MOSFETs Applications

  • Automotive power switching applications
  • Low-side load switching circuits
  • DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify that the specific orderable part number matches the required D2-Pak packaging configuration. Confirm compliance with RoHS directives and ensure the component meets the necessary AEC-Q101 qualification levels for your target automotive application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring robust automotive-grade performance with low conduction losses. Ensure the design accommodates the 175°C maximum junction temperature and verify that the PCB layout supports the thermal requirements associated with the D2-Pak package and specified current ratings.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs. It shares core electrical specifications with other variants like the TO-220AB packaged AUIRF1404Z and the TO-262 packaged AUIRF1404ZL, differing primarily in physical mounting style and package dimensions while maintaining identical silicon performance characteristics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include AUIRF1404Z and AUIRF1404ZL. Verify pinout compatibility and thermal management requirements when substituting between different package types within the same product family.

Single FETs, MOSFETs FAQ

Is the AUIRF1404ZS suitable for repetitive avalanche conditions?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature.

What is the maximum continuous drain current for this package?

The package-limited continuous drain current is 160A, while the silicon-limited current is 180A at a case temperature of 25°C.

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