AUIRF1405ZS-7TRL

$2.13

Description：MOSFET N-CH 55V 120A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:81fceaf76146 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF1405ZS-7TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1405ZS-7TRL

Description：MOSFET N-CH 55V 120A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.9mOhm @ 88A, 10V
Vgs(th) (Max) @ Id：4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK (7-Lead)
Package / Case：TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Single FETs, MOSFETs datasheet and documents for AUIRF1405ZS-7TRL

AUIRF1405ZS-7TRL

Single FETs, MOSFETs Overview

The AUIRF1405ZS-7TRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 55V drain-to-source breakdown voltage and a maximum on-resistance of 4.9mΩ at VGS=10V. The device supports a continuous drain current of 120A (package limited) and handles a pulsed drain current of 300A. It operates within a junction temperature range of -55°C to +175°C, utilizes D2Pak-7 Pin surface-mount packaging, and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

Automotive qualification per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Repetitive avalanche rating allowed up to Tjmax
Fast switching speed capabilities

Single FETs, MOSFETs Applications

Automotive powertrain applications
Low stray inductance circuits
Ground plane power switching
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' indicates tape and reel packaging configuration. Confirm the part number matches the official datasheet revision history which corrected this designation. Ensure the component meets required automotive quality standards and check for any specific customer discontinuance notifications associated with the AU prefix.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current handling are required in automotive environments. The D2Pak-7 Pin package provides low stray inductance suitable for ground plane mounting. Verify that the 55V voltage rating and 120A current capacity align with the system's electrical requirements and thermal management capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically designed for automotive applications requiring high reliability and efficiency. The device integrates advanced processing techniques to minimize silicon area resistance while maintaining robust performance under extreme thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists or cross-reference guides provided by Infineon Technologies. Verify pinout compatibility and electrical specifications before substituting with other HEXFET variants or similar automotive-grade MOSFETs.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The datasheet specifies that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax), with detailed performance curves provided in Figures 15 and 16.