AUIRF1405ZSTRL

Single FETs, MOSFETs Overview

The AUIRF1405ZSTRL is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced silicon processing to achieve low on-resistance within a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 55 V and supports a continuous drain current of 44 A. With a maximum on-state resistance of 7.5 mOhms and a gate charge of 63 nC, it is designed for high-efficiency switching applications. It operates reliably across a temperature range from -55°C to +175°C and holds AEC-Q100 qualification.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability with AEC-Q100 qualification for robust performance in demanding environments.
• HEXFET technology engineered for extremely low on-resistance per silicon area to enhance power efficiency.
• Enhancement-mode N-channel configuration optimized for high-speed power switching applications.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-efficiency DC-DC converter circuits
• Motor control interfaces

Single FETs, MOSFETs Procurement Notes

This component is officially listed as obsolete and no longer manufactured by Infineon Technologies. Verification of availability should focus on authorized distributors holding remaining stock or approved substitute components. Ensure any replacement parts meet the original electrical specifications and automotive qualification standards required for the application.

Single FETs, MOSFETs Selection Notes

Select this part only if legacy compatibility is required, as it is discontinued. For new designs, consider modern alternatives that offer improved thermal performance or lower on-resistance. Verify that the D2PAK-3 package fits the PCB layout constraints and that the 55V rating aligns with the system voltage requirements.

Single FETs, MOSFETs Part Context

The AUIRF1405ZSTRL belongs to Infineon's HEXFET family, specifically tailored for automotive electronics. It shares architectural similarities with other 55V N-channel MOSFETs but is distinguished by its specific Rds(on) characteristics and AEC-Q100 certification. It serves as a specialized solution for automotive power management where reliability under extreme temperatures is critical.

Single FETs, MOSFETs Replacement Considerations

IAUC120N06S5N032ATMA1 is identified as a manufacturer-recommended substitute. Verify pinout compatibility and electrical parameter alignment before integration.