AUIRF3710Z

Description：MOSFET N-CH 100V 59A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:aad8691bdfc6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF3710Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 59A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3710Z

Description：MOSFET N-CH 100V 59A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 35A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF3710Z

AUIRF3710Z

Single FETs, MOSFETs Overview

The AUIRF3710Z is an automotive-grade HEXFET power MOSFET manufactured by Infineon Technologies. It features a single N-channel configuration with a drain-source breakdown voltage of 100 V and a continuous drain current of 59 A at 25°C case temperature. The device exhibits a maximum on-resistance of 18 mΩ at VGS = 10V. It supports a junction temperature range from -55°C to +175°C and includes fully avalanche-rated capabilities for repetitive operation.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Low on-resistance for high efficiency
Fast switching speed
Fully avalanche rated with repetitive allowance up to Tjmax

Single FETs, MOSFETs Applications

Automotive power switching applications
High-efficiency motor control circuits
Power management systems requiring 175°C operation

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base part number corresponds to the TO-220AB form factor. Confirm that the AU prefix meets your project's automotive qualification requirements. Check for end-of-life status or alternative sourcing if the standard tube packaging is unavailable. Ensure design safeguards are in place for avalanche energy limits.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high thermal tolerance are critical. The 18 mΩ on-resistance minimizes conduction losses in high-current scenarios. Consider the TO-220AB package for through-hole mounting needs. Evaluate the thermal resistance characteristics against your heat sinking strategy to maintain junction temperatures within the specified 175°C limit during peak load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs, specifically designed for robust performance in demanding environments. The inclusion of the 'AU' prefix indicates compliance with automotive industry standards for product discontinuance and process change notifications. It utilizes advanced processing techniques to achieve low on-resistance per silicon area compared to standard industrial counterparts.