AUIRF3805S

Single FETs, MOSFETs Overview

The AUIRF3805S is an N-channel enhancement mode power MOSFET from the Infineon HEXFET series. It features a maximum drain-source voltage of 55 V and a continuous drain current of 240 A. The device utilizes a D2PAK-7 surface-mount package with seven pins. Key electrical parameters include a maximum on-resistance of 2.6 mΩ, a gate threshold voltage range of 2 V to 4 V, and a typical gate charge of 130 nC at 10 V. It supports a maximum power dissipation of 300 W and operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in demanding environments.
• HEXFET technology provides low on-resistance for efficient power switching and reduced conduction losses.
• D2PAK-7 package design facilitates effective thermal management and high-current handling capabilities.

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix '7P' against official Infineon documentation to confirm pin configuration and packaging details. Ensure the component meets AEC-Q101 automotive qualification requirements for your target application. Cross-reference datasheet revisions to confirm parameter consistency before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V N-channel MOSFET with high current capacity is required for automotive or industrial use. The D2PAK-7 package offers a balance between thermal performance and board space. Consider the 2.6 mΩ on-resistance for efficiency calculations in low-voltage, high-current power stages.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, known for high-performance power switching. The AUIRF prefix indicates automotive qualification, distinguishing it from standard industrial variants. It complements other 55 V devices in the portfolio by offering enhanced ruggedness and specific packaging options suitable for automated assembly.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the AEC-Q101 qualification or exact thermal characteristics. Verify pinout compatibility and electrical limits before swapping components in existing designs.