Single FETs, MOSFETs AUIRF3808S product image

AUIRF3808S

  • Description:MOSFET N-CH 75V 106A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:a17745f8343a Category: Brand:

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AUIRF3808S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 106A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3808S

  • Description:MOSFET N-CH 75V 106A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:106A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):200W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF3808S

AUIRF3808S

Single FETs, MOSFETs Overview

The AUIRF3808S is an automotive-grade N-channel HEXFET power MOSFET in a D2-Pak (TO-263AB) package. It features a maximum drain-source voltage of 75 V and a continuous drain current of 106 A at 25°C case temperature. The device has a maximum on-resistance of 7.0 mΩ at VGS = 10V and ID = 82A, with a typical value of 5.9 mΩ. Total gate charge is typically 150 nC. It supports a junction temperature range from -55°C to +175°C and offers a single pulse avalanche energy rating of 430 mJ.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fully avalanche rated with repetitive avalanche capability up to Tjmax
  • Fast switching speed with dynamic dV/dT rating

Single FETs, MOSFETs Applications

  • Automotive applications
  • Motor control
  • Switching mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your packaging needs. The base part number AUIRF3808S corresponds to tube packaging. For tape and reel options, confirm if the STRL suffix is necessary. Ensure the component meets RoHS compliance requirements. Check the latest datasheet revision for any updates to qualification levels or electrical characteristics before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-current automotive circuits requiring robust thermal performance. The 75 V rating suits low-voltage DC systems. Consider the 7.0 mΩ maximum RDS(on) for efficiency calculations. The wide operating temperature range allows use in harsh environments. Verify PCB mounting capabilities for the D2-Pak package to ensure adequate heat dissipation for the 200 W power dissipation rating.

Single FETs, MOSFETs Part Context

This device belongs to the Infineon HEXFET family, utilizing Stripe Planar design techniques. It is designed specifically for automotive applications, combining ruggedized device design with fast switching speeds. The product line emphasizes reliability and efficiency through advanced processing techniques that minimize on-resistance per silicon area.

Single FETs, MOSFETs Replacement Considerations

The IRF3808S is listed as the standard industrial grade equivalent without the 'AU' automotive prefix. Verify if automotive qualification is strictly required for the application. Other similar 75 V N-channel MOSFETs may be considered but require checking pinout compatibility and electrical parameter margins.

AUIRF3808SAUIRF3808S

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