AUIRF5210S

Single FETs, MOSFETs Overview

The AUIRF5210S is an automotive-grade P-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a -100V drain-source breakdown voltage and supports a continuous drain current of -38A at 25°C case temperature, with a maximum on-resistance of 60mΩ. The device operates within a junction temperature range of -55°C to +150°C and is housed in a D2-Pak package. Key electrical characteristics include a gate threshold voltage between -2.0V and -4.0V, total gate charge up to 230nC, and a peak diode recovery dv/dt rating of -7.4 V/ns.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards
• Fully avalanche rated with repetitive avalanche capability up to Tjmax
• Ruggedized design with dynamic dv/dt rating
• Lead-free and RoHS compliant construction

Single FETs, MOSFETs Applications

• Automotive power management systems
• Cellular communication equipment
• General purpose automotive switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your production needs, such as tube or tape and reel packaging. Confirm that the component meets the exact AEC-Q101 qualification level required for your automotive application. Ensure thermal management designs account for the specified junction-to-case and junction-to-ambient thermal resistance values under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-channel solution is needed for automotive environments requiring high reliability and avalanche ruggedness. Consider the D2-Pak package constraints and thermal performance if board-mounted operation is planned. Evaluate the gate charge and switching times against your driver capabilities to ensure efficient operation within the specified voltage and current limits.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically engineered for automotive durability. The 'AU' prefix denotes its automotive qualification status. It utilizes advanced processing techniques to achieve low on-resistance per silicon area, balancing efficiency with the ruggedness required for harsh vehicle electrical environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility based solely on pinout or generic specifications without verifying absolute maximum ratings and thermal characteristics.