Single FETs, MOSFETs AUIRF7647S2TR product image

AUIRF7647S2TR

$1.88
  • Description:MOSFET N-CH 100V 5.9A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:042a26603600 Category: Brand:

  
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AUIRF7647S2TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 5.9A DIRECTFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF7647S2TR

  • Description:MOSFET N-CH 100V 5.9A DIRECTFET
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:5.9A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:31mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 41W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET™ SC
  • Package / Case:DirectFET™ Isometric SC

Single FETs, MOSFETs datasheet and documents for AUIRF7647S2TR

AUIRF7647S2TR

Single FETs, MOSFETs Overview

The AUIRF7647S2TR is an Automotive Grade 1 N-Channel HEXFET Power MOSFET utilizing DirectFET packaging. It features a Drain-to-Source Voltage of 100 V, typical On-Resistance of 26 mΩ (max 31 mΩ), and Total Gate Charge of 14 nC. Continuous Drain Current reaches 24 A at 25°C case temperature. Operating Junction Temperature spans -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Optimized for Class D audio amplifier applications with low gate charge and reverse recovery characteristics.
  • DirectFET ISOMETRIC SC package enables dual-sided cooling for maximum thermal transfer.
  • Low parasitic inductance reduces voltage ringing and improves EMI performance compared to wire-bonded packages.

Single FETs, MOSFETs Applications

  • Automotive Class D audio amplifier systems
  • Powertrain applications requiring robust switching
  • High-efficiency power conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR indicates Tape and Reel packaging with a standard quantity of 4800 units. Confirm the component meets Automotive qualification standards per AEC-Q101 before integration into safety-critical designs. Ensure assembly processes follow application note AN-1035 for proper manufacturing methods.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive audio amplifiers requiring high efficiency and low distortion. The low Qg and Qrr values specifically target THD and EMI improvements. Consider the DirectFET platform if dual-sided cooling capabilities are required to maximize thermal dissipation within constrained PCB layouts.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's DirectFET family, combining advanced silicon technology with a specialized substrate outline. It serves as a high-performance solution for automotive electronics, offering superior thermal management and electrical characteristics compared to conventional wire-bonded SOIC packages.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific DirectFET footprint or thermal performance requirements.

AUIRF7647S2TRAUIRF7647S2TR
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