AUIRF7738L2TR

Single FETs, MOSFETs Overview

The AUIRF7738L2TR is an automotive-grade N-channel power MOSFET utilizing HEXFET silicon technology and DirectFET L6 packaging. It features a 40V drain-source breakdown voltage, a typical on-resistance of 1.2mΩ (max 1.6mΩ), and a continuous drain current of 184A at 25°C case temperature. The device supports a junction temperature range of -55°C to +175°C, with a total gate charge of 129nC and a peak pulsed drain current capability of 736A.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments.
• DirectFET L6 package enables dual-sided cooling for high thermal performance within a low-profile footprint.
• Optimized for motor drive and heavy load applications through low on-resistance and fast switching characteristics.
• Robust avalanche capability ensures durability under repetitive transient energy stress conditions.

Single FETs, MOSFETs Applications

• Automotive motor drive systems
• High frequency DC-DC converters
• Heavy load applications on ICE platforms
• Hybrid electric vehicle (HEV) power stages
• Electric vehicle (EV) traction inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TR indicates tape and reel packaging configuration. Confirm the component meets AEC-Q101 automotive qualification requirements for the target application environment. Ensure compatibility with vapor phase, infrared, or convection soldering processes as specified in assembly guidelines.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current density and efficient thermal management in space-constrained automotive layouts. Evaluate the 1.2mΩ typical on-resistance against system efficiency targets. Consider the 175°C operating limit for high-temperature environments and verify gate drive requirements align with the 129nC gate charge specification.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's DirectFET family, combining advanced silicon technology with specialized packaging. It is designed to replace traditional discrete packages by offering superior thermal transfer and reduced parasitic inductance. The L6 outline provides a DPak-compatible footprint while enabling direct heatsinking to the substrate.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting other 40V DirectFET variants. Verify that alternative components meet the same AEC-Q101 automotive grade and support the required 175°C junction temperature operation.