AUIRF7805Q

Description：MOSFET N-CH 30V 13A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:d596c68e49a4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF7805Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 13A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF7805Q

Description：MOSFET N-CH 30V 13A 8SO
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V
Rds On (Max) @ Id, Vgs：11mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for AUIRF7805Q

AUIRF7805Q

Single FETs, MOSFETs Overview

The AUIRF7805Q is an automotive-qualified dual N-channel HEXFET power MOSFET in a Dual SO-8 package. It features a drain-source voltage (VDSS) of 30V and a typical on-resistance (RDS(on)) of 9.2mΩ at VGS=4.5V, with a maximum of 11mΩ. The continuous drain current (ID) is 13A at TA=25°C and 10A at TA=70°C. Pulsed drain current reaches 100A. Operating junction temperature ranges from -55°C to +150°C. Power dissipation is 2.5W at 25°C ambient. Gate threshold voltage is typically 1.0V to 3.0V. Total gate charge is typically 22nC.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for reliability in vehicle environments.
Dual MOSFET die capability within a single surface mount SO-8 package to reduce board space.
Advanced planar technology achieving extremely low on-resistance per silicon area.
Capable of 150°C junction operating temperature with improved repetitive avalanche rating.

Single FETs, MOSFETs Applications

Automotive power management systems
Low-side switching applications
DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your volume needs. The standard part number AUIRF7805Q is available in Tape & Reel format under order code AUIRF7805QTR with a quantity of 4000 units. Confirm moisture sensitivity level MSL1 handling requirements during assembly. Ensure compatibility with lead-free and RoHS compliant manufacturing processes as specified by Infineon Technologies AG.

Single FETs, MOSFETs Selection Notes

Select this component when dual isolated N-channel switches are required in a compact SO-8 footprint. The 30V rating suits low-voltage automotive bus architectures. Verify thermal management capabilities against the junction-to-ambient resistance of 50°C/W for your specific PCB copper area. Consider the logic-level gate drive requirement of 4.5V for full enhancement.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs designed for high efficiency. The 'AU' prefix indicates Automotive qualification status. It utilizes lastest processing techniques to minimize conduction losses. The Dual SO-8 configuration integrates two independent channels, offering a space-saving alternative to discrete single MOSFET solutions in power electronics designs.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the source material. Consult Infineon technical support for cross-reference recommendations if pin-compatible alternatives are required.