Single FETs, MOSFETs AUIRFB8405 product image

AUIRFB8405

$2.60
  • Description:AUIRFB8405 - 20V-40V N-CHANNEL A
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk

SKU:2eb3bd6c2c27 Category: Brand:

  
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AUIRFB8405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUIRFB8405 - 20V-40V N-CHANNEL A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB8405

  • Description:AUIRFB8405 - 20V-40V N-CHANNEL A
  • Series:HEXFET®
  • Mfr:International Rectifier
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.5mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:161 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5193 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):163W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB8405

AUIRFB8405

Single FETs, MOSFETs Overview

The AUIRFB8405 is a 40 V N-channel automotive power MOSFET from the 12.7th generation HEXFET family, housed in a TO-220 through-hole package. It features a maximum on-resistance of 2.5 mΩ at 10 V gate drive and supports a continuous drain current of 120 A. The device operates with a junction temperature up to 175 °C and offers a typical total gate charge of 161 nC at 10 V. Key thermal performance includes a junction-to-case thermal resistance of 0.92 K/W, ensuring reliable operation in high-power automotive environments.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade reliability compliant with specific quality standards
  • Advanced process technology enabling ultra-low on-resistance per silicon area
  • Enhanced repetitive avalanche rating for robust transient handling
  • Fast switching characteristics optimized for efficiency

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control applications requiring low conduction losses
  • High-reliability DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and lead-free status as specified in official documentation. Check for end-of-life status or alternative sourcing options if availability is constrained. Ensure packaging integrity matches the TO-220 specification during receipt inspection.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 40 V breakdown voltage with minimal conduction loss. The TO-220 package suits applications needing efficient heat dissipation via board mounting or heatsinks. Consider the 120 A current limit and 175 °C junction temperature when designing thermal management solutions for automotive environments.

Single FETs, MOSFETs Part Context

This part belongs to International Rectifier's (Infineon) advanced automotive MOSFET portfolio, leveraging next-generation planar cell technology. It represents an evolution in power density and switching efficiency specifically tailored for the stringent demands of modern vehicle electrical architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully when considering alternatives.

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