AUIRFB8409

Single FETs, MOSFETs Overview

The AUIRFB8409 is an N-channel HEXFET power MOSFET designed for automotive applications. It features a 40V drain-source voltage rating and a maximum continuous drain current of 195A (package limited) or 409A (silicon limited). The device exhibits a typical on-resistance of 0.97mΩ with a maximum of 1.2mΩ at VGS=10V. It supports a junction temperature up to 175°C, offers fast switching speeds, and allows repetitive avalanche operation up to Tjmax.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced process technology to achieve extremely low on-resistance per silicon area.
• Designed for high reliability in automotive environments with a 175°C operating junction temperature.
• Features fast switching characteristics and improved repetitive avalanche ratings.
• Qualified according to AEC-Q101 standards for automotive grade performance.

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid Systems
• Heavy Loads
• DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package type matches the design requirements, as this part number corresponds to the TO-220AB form factor. Confirm that the ordering suffix aligns with the desired packaging format, such as tube or tape and reel, if available for this specific variant. Ensure compliance with RoHS directives and lead-free specifications required by the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade switching capabilities at low voltage levels. The low on-resistance minimizes conduction losses, while the high current capacity supports heavy load applications. Consider the thermal resistance and derating curves to ensure adequate heat dissipation within the specified junction temperature limits during operation.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It is specifically engineered for the automotive sector, distinguishing itself through rigorous qualification standards compared to standard industrial components. The 'AU' prefix indicates adherence to automotive industry requirements regarding product discontinuance and process change notifications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other parts within the same series such as AUIRFS8409 (D2-Pak) or AUIRFSL8409 (TO-262), which share identical electrical characteristics but differ in physical package dimensions.

Single FETs, MOSFETs FAQ

Is repetitive avalanche operation allowed for this device?

Yes, the datasheet specifies that repetitive avalanche operation is allowed up to the maximum junction temperature (Tjmax).

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current (409A) represents the theoretical maximum based on the die, while the package-limited current (195A) is constrained by the bond wire and lead frame capabilities.