AUIRFL024NTR

Description：MOSFET N-CH 55V 2.8A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:fb7f7b868375 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFL024NTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 2.8A SOT-223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFL024NTR

Description：MOSFET N-CH 55V 2.8A SOT-223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：75mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRFL024NTR

AUIRFL024NTR

Single FETs, MOSFETs Overview

The AUIRFL024NTR is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve low on-resistance and fast switching speeds within a SOT-223 package. The device features a drain-to-source breakdown voltage of 55 V, a continuous drain current of 2.8 A at 25°C, and a maximum static drain-to-source on-resistance of 75 mΩ. It supports a junction temperature range from -55°C to +150°C and includes fully avalanche-rated capabilities with repetitive avalanche allowance up to the maximum junction temperature.

Single FETs, MOSFETs Feature Summary

Advanced planar technology for low on-resistance per silicon area
Fast switching speed combined with ruggedized device design
Fully avalanche rated with repetitive avalanche capability up to Tjmax
High dynamic dV/dt rating for improved performance

Single FETs, MOSFETs Applications

Automotive applications requiring high reliability
Low-side switching circuits in automotive environments
Power management systems utilizing HEXFET technology

Single FETs, MOSFETs Procurement Notes

Verify that the component matches the specific AUIRFL024NTR designation to ensure correct packaging and automotive qualification status. Confirm that the ordering suffix aligns with the required tape and reel quantity of 2500 devices. Cross-reference the datasheet revision and qualification standards to ensure compliance with current automotive requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits that require an automotive-qualified N-channel MOSFET with a 55 V breakdown voltage. Consider its 75 mΩ maximum on-resistance and 2.8 A continuous current rating for appropriate load handling. Evaluate the thermal resistance characteristics relative to the PCB mounting conditions to ensure adequate heat dissipation within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs, specifically designed for automotive markets. It represents a cellular design approach that optimizes processing techniques to minimize on-resistance while maintaining fast switching characteristics. The device is qualified according to AEC-Q101 standards, ensuring suitability for demanding automotive electronic environments.