AUIRFN8401TR

Description：MOSFET N-CH 40V 84A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:db167e52620c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFN8401TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 84A PQFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFN8401TR

Description：MOSFET N-CH 40V 84A PQFN
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2170 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：4.2W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PQFN (5x6)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for AUIRFN8401TR

AUIRFN8401TR

Single FETs, MOSFETs Overview

The AUIRFN8401TR is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes advanced process technology to achieve ultra-low on-resistance and fast switching capabilities within a PQFN 5mm x 6mm surface-mount package. The device supports a maximum drain-to-source voltage of 40V, with a typical static RDS(on) of 3.6mΩ at VGS=10V and ID=50A. It offers a continuous drain current of 84A (silicon limited) at 25°C case temperature and handles pulsed currents up to 336A. Operating junction temperatures range from -55°C to +175°C, and the component is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
Advanced processing techniques enable extremely low on-resistance per silicon area for improved efficiency.
Capable of operating at junction temperatures up to 175°C with fast switching speeds.
Designed to allow repetitive avalanche operation up to the maximum junction temperature.

Single FETs, MOSFETs Applications

Motor Control
Reverse Battery Protection
Heavy Loads

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TR' corresponds to the Tape and Reel packaging format containing 4000 units per standard pack. Confirm that the component meets the required Automotive grade specifications and AEC-Q101 qualification levels before integration into designs. Ensure thermal management strategies align with the specified linear derating factors and thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust automotive-grade performance with low conduction losses. The PQFN 5x6 mm package provides a compact footprint suitable for space-constrained designs. Consider the 175°C operating temperature rating for high-thermal-stress environments. Evaluate the gate charge and switching characteristics against the driving circuit requirements to optimize dynamic performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs produced by Infineon Technologies (formerly International Rectifier). The 'AU' prefix indicates compliance with automotive industry requirements regarding product discontinuance and process change notifications. It is designed specifically for automotive applications, leveraging proven HEXFET ruggedness and efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference pinouts, electrical parameters, and package dimensions when evaluating alternatives.