AUIRFR2905ZTR

$0.78

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:764a42efadce Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR2905ZTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR2905ZTR

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：1380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR2905ZTR

AUIRFR2905ZTR

Single FETs, MOSFETs Overview

The AUIRFR2905Z is an N-channel HEXFET power MOSFET designed for automotive applications. It features a 55V drain-source breakdown voltage and a maximum on-resistance of 14.5mΩ at VGS=10V. The device supports a continuous drain current of 42A (package limited) or 59A (silicon limited). It operates up to a junction temperature of 175°C and allows repetitive avalanche energy. Key dynamic parameters include a total gate charge of 29nC, turn-on delay of 14ns, rise time of 66ns, turn-off delay of 31ns, and fall time of 35ns.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Supports 175°C operating junction temperature
Fast switching speed with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

Automotive power management systems
High-efficiency switching applications
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for the desired packaging format. The base part number AUIRFR2905Z corresponds to tube packaging, while AUIRFR2905ZTRL indicates tape and reel left configuration. Confirm that the component meets the necessary automotive qualification standards for the intended application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high-temperature operation are critical requirements. The low on-resistance minimizes conduction losses, while the fast switching characteristics reduce dynamic losses. Ensure the thermal design accommodates the specified junction-to-case thermal resistance to maintain performance within the 175°C limit under load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family from Infineon Technologies, utilizing advanced processing techniques to achieve low on-resistance per silicon area. It is specifically engineered for automotive environments, combining efficiency with robustness against electrical stress such as repetitive avalanche events.