AUIRFR3504

Description：MOSFET N-CH 40V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:6a565b375fec Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR3504 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 56A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR3504

Description：MOSFET N-CH 40V 56A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：140W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR3504

AUIRFR3504

Single FETs, MOSFETs Overview

The AUIRFR3504 is an N-channel enhancement mode HEXFET power MOSFET designed for automotive applications. It features a D-Pak (TO-252) surface-mount package with three pins. The device supports a maximum drain-source voltage of 40 V and offers a typical on-resistance of 7.8 mΩ, with a maximum rating of 9.2 mΩ at VGS = 10V and ID = 30A. Silicon-limited continuous drain current reaches 87 A at TC = 25°C, while the package limits this to 56 A. Maximum power dissipation is 140 W at 25°C case temperature. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Advanced planar technology achieves low on-resistance per silicon area
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Fast switching speed combined with ruggedized device design
Automotive qualified according to AEC-Q101 standards

Single FETs, MOSFETs Applications

Automotive electronic systems
High-efficiency switching applications
Power management circuits requiring ruggedized design

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your production needs. The standard tube packaging corresponds to part number AUIRFR3504, while tape and reel options are available as AUIRFR3504TRL. Confirm that the selected variant meets the exact quantity and handling requirements for your assembly line before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification under AEC-Q101 is mandatory. Ensure the application can accommodate the 40 V breakdown voltage and manage the thermal load within the 140 W dissipation limit. Consider the package-limited current of 56 A if operating in high-temperature environments where silicon limits may not be achievable.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing stripe planar design techniques. It is specifically engineered to provide efficient and reliable performance in automotive environments. The product integrates fast switching capabilities with robust avalanche ratings, making it suitable for demanding power switching tasks.