AUIRFR4104

Single FETs, MOSFETs Overview

The AUIRFR4104 is an N-channel HEXFET power MOSFET from Infineon Technologies, designed for automotive applications. It features a maximum drain-source voltage of 40 V and a continuous drain current of 119 A (silicon limited) or 42 A (package limited). The device has a maximum on-resistance of 5.5 mΩ at VGS = 10V and ID = 42A. It supports a junction temperature range of -55°C to +175°C with a maximum power dissipation of 140 W. Key dynamic parameters include a total gate charge of 59 nC typical and a reverse recovery time of 28 ns typical.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards
• Advanced process technology for low on-resistance
• Fast switching speed capabilities
• Repetitive avalanche allowed up to Tjmax

Single FETs, MOSFETs Applications

• Automotive power conversion
• General purpose switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base model covers both D-Pak (TO-252AA) and I-Pak (TO-251AA) configurations. Confirm ordering suffixes such as TRRL for tape and reel quantities versus standard tube packaging. Ensure compliance with RoHS directives and check moisture sensitivity level requirements during storage and handling procedures before assembly.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high thermal stability are required. The 175°C operating temperature rating allows for robust performance in demanding environments. Consider the package-limited current of 42 A for PCB mounting scenarios rather than the silicon-limited 119 A rating. Evaluate thermal resistance values for heat sinking design to ensure safe operation within the absolute maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The product line includes variants like AUIRFU4104 for different package types, all sharing similar electrical characteristics optimized for efficiency and reliability in power switching circuits.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other automotive-grade 40V N-channel MOSFETs with comparable RDS(on) and current ratings. Verify pinout compatibility between D-Pak and I-Pak packages if swapping form factors. Check equivalent avalanche energy ratings and thermal resistance specifications to ensure system reliability is maintained.